IndiumV3, Main, Repository, bibRecord, 000218

ZnO/PPy Hybrid Heterojunction as an Ultraviolet Photosensor

Identifieur interne : 000218 ( Main/Repository ); précédent : 000217; suivant : 000219

ZnO/PPy Hybrid Heterojunction as an Ultraviolet Photosensor

Auteurs : RBID : Pascal:13-0227508

Descripteurs français

Pascal (Inist)
- Hétérojonction, Photodétecteur, Dépôt électrolytique, Couche oxyde, Interface, Microscopie électronique balayage, Morphologie, Microstructure, Jonction p n, Densité courant, Diode, Circuit ET, Courant court circuit, Facteur remplissage, Oxyde de zinc, Hétérostructure, Pyrrole polymère, Composé organique volatil, Effet redresseur, Extinction luminescence, Exciton, Charge effective, Séparation charge, Photoluminescence, ZnO, Substrat ZnO, Substrat indium, Substrat oxyde d'indium et de zinc, 8560G, 8115P, 7855, 8560.

English descriptors

KwdEn :
- AND circuit, Charge separation, Current density, Diode, Effective charge, Electrodeposition, Exciton, Fill factor, Heterojunction, Heterostructures, Interface, Luminescence quenching, Microstructure, Morphology, Oxide layer, Photodetector, Photoluminescence, Pyrrole polymer, Rectifier effect, Scanning electron microscopy, Short circuit currents, Volatile organic compound, Zinc oxide, p n junction.

Abstract

The electrodeposition method was used to deposit a zinc oxide (ZnO) layer on an indium tin oxide substrate. Polypyrrole (PPy) was deposited also by the electrodeposition method on the same ZnO layer to form a ZnO/PPy interface. Scanning electron microscopy was performed to investigate the morphology of the organic-inorganic interface. The p-n junction so formed was subjected to electrical studies. The junction was found to be sensitive to exposure to ultraviolet light, which increased the junction's current density. The diode was found to have an open-circuit voltage (V_oc) of 0.518 V and a short-circuit current density (J_sc) of 9.86 × 10^-7 A/cm². The fill factor was estimated to be 0.37 with a rectification ratio of 93. Photoluminescence studies revealed quenching of the excitonic emission at the ZnO/PPy interface. The interface is thus found to be responsible for the effective separation of charge carriers.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000B29

Links to Exploration step

Pascal:13-0227508

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">ZnO/PPy Hybrid Heterojunction as an Ultraviolet Photosensor</title>
<author><name sortKey="Dhingra, Mansi" uniqKey="Dhingra M">Mansi Dhingra</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics & Astrophysics, University of Delhi, Room No. 103</s1>
<s2>New Delhi 110007</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>New Delhi 110007</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Shrivastava, Sadhna" uniqKey="Shrivastava S">Sadhna Shrivastava</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Physics, Dyal Singh College, University of Delhi, Lodi Road</s1>
<s2>New Delhi 110003</s2>
<s3>IND</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>New Delhi 110003</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Senthil Kumar, P" uniqKey="Senthil Kumar P">P. Senthil Kumar</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics & Astrophysics, University of Delhi, Room No. 103</s1>
<s2>New Delhi 110007</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>New Delhi 110007</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Annapoorni, S" uniqKey="Annapoorni S">S. Annapoorni</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Physics & Astrophysics, University of Delhi, Room No. 103</s1>
<s2>New Delhi 110007</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Inde</country>
<wicri:noRegion>New Delhi 110007</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0227508</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0227508 INIST</idno>
<idno type="RBID">Pascal:13-0227508</idno>
<idno type="wicri:Area/Main/Corpus">000B29</idno>
<idno type="wicri:Area/Main/Repository">000218</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0361-5235</idno>
<title level="j" type="abbreviated">J. electron. mater.</title>
<title level="j" type="main">Journal of electronic materials</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>AND circuit</term>
<term>Charge separation</term>
<term>Current density</term>
<term>Diode</term>
<term>Effective charge</term>
<term>Electrodeposition</term>
<term>Exciton</term>
<term>Fill factor</term>
<term>Heterojunction</term>
<term>Heterostructures</term>
<term>Interface</term>
<term>Luminescence quenching</term>
<term>Microstructure</term>
<term>Morphology</term>
<term>Oxide layer</term>
<term>Photodetector</term>
<term>Photoluminescence</term>
<term>Pyrrole polymer</term>
<term>Rectifier effect</term>
<term>Scanning electron microscopy</term>
<term>Short circuit currents</term>
<term>Volatile organic compound</term>
<term>Zinc oxide</term>
<term>p n junction</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Hétérojonction</term>
<term>Photodétecteur</term>
<term>Dépôt électrolytique</term>
<term>Couche oxyde</term>
<term>Interface</term>
<term>Microscopie électronique balayage</term>
<term>Morphologie</term>
<term>Microstructure</term>
<term>Jonction p n</term>
<term>Densité courant</term>
<term>Diode</term>
<term>Circuit ET</term>
<term>Courant court circuit</term>
<term>Facteur remplissage</term>
<term>Oxyde de zinc</term>
<term>Hétérostructure</term>
<term>Pyrrole polymère</term>
<term>Composé organique volatil</term>
<term>Effet redresseur</term>
<term>Extinction luminescence</term>
<term>Exciton</term>
<term>Charge effective</term>
<term>Séparation charge</term>
<term>Photoluminescence</term>
<term>ZnO</term>
<term>Substrat ZnO</term>
<term>Substrat indium</term>
<term>Substrat oxyde d'indium et de zinc</term>
<term>8560G</term>
<term>8115P</term>
<term>7855</term>
<term>8560</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">The electrodeposition method was used to deposit a zinc oxide (ZnO) layer on an indium tin oxide substrate. Polypyrrole (PPy) was deposited also by the electrodeposition method on the same ZnO layer to form a ZnO/PPy interface. Scanning electron microscopy was performed to investigate the morphology of the organic-inorganic interface. The p-n junction so formed was subjected to electrical studies. The junction was found to be sensitive to exposure to ultraviolet light, which increased the junction's current density. The diode was found to have an open-circuit voltage (V<sub>oc</sub>
) of 0.518 V and a short-circuit current density (J<sub>sc</sub>
) of 9.86 × 10<sup>-7</sup>
 A/cm<sup>2</sup>
. The fill factor was estimated to be 0.37 with a rectification ratio of 93. Photoluminescence studies revealed quenching of the excitonic emission at the ZnO/PPy interface. The interface is thus found to be responsible for the effective separation of charge carriers.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0361-5235</s0>
</fA01>
<fA02 i1="01"><s0>JECMA5</s0>
</fA02>
<fA03 i2="1"><s0>J. electron. mater.</s0>
</fA03>
<fA05><s2>42</s2>
</fA05>
<fA06><s2>6</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>ZnO/PPy Hybrid Heterojunction as an Ultraviolet Photosensor</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>DHINGRA (Mansi)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SHRIVASTAVA (Sadhna)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>SENTHIL KUMAR (P.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>ANNAPOORNI (S.)</s1>
</fA11>
<fA14 i1="01"><s1>Department of Physics & Astrophysics, University of Delhi, Room No. 103</s1>
<s2>New Delhi 110007</s2>
<s3>IND</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Department of Physics, Dyal Singh College, University of Delhi, Lodi Road</s1>
<s2>New Delhi 110003</s2>
<s3>IND</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA20><s1>1235-1241</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>15479</s2>
<s5>354000174799900400</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>34 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0227508</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of electronic materials</s0>
</fA64>
<fA66 i1="01"><s0>DEU</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>The electrodeposition method was used to deposit a zinc oxide (ZnO) layer on an indium tin oxide substrate. Polypyrrole (PPy) was deposited also by the electrodeposition method on the same ZnO layer to form a ZnO/PPy interface. Scanning electron microscopy was performed to investigate the morphology of the organic-inorganic interface. The p-n junction so formed was subjected to electrical studies. The junction was found to be sensitive to exposure to ultraviolet light, which increased the junction's current density. The diode was found to have an open-circuit voltage (V<sub>oc</sub>
) of 0.518 V and a short-circuit current density (J<sub>sc</sub>
) of 9.86 × 10<sup>-7</sup>
 A/cm<sup>2</sup>
. The fill factor was estimated to be 0.37 with a rectification ratio of 93. Photoluminescence studies revealed quenching of the excitonic emission at the ZnO/PPy interface. The interface is thus found to be responsible for the effective separation of charge carriers.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F15</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A15P</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70H55</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Hétérojonction</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Heterojunction</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Heterounión</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Photodétecteur</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Photodetector</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Fotodetector</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Dépôt électrolytique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Electrodeposition</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Depósito electrolítico</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Couche oxyde</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Oxide layer</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Capa óxido</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Interface</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Interface</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Interfase</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Microscopía electrónica barrido</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Morphologie</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Morphology</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Morfología</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Microstructure</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Microstructure</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Microestructura</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Jonction p n</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>p n junction</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Unión p n</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Densité courant</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Current density</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Densidad corriente</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Diode</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Diode</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Diodo</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Circuit ET</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>AND circuit</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Circuito Y</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Courant court circuit</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Short circuit currents</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Facteur remplissage</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Fill factor</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Zinc óxido</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>Hétérostructure</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="3" l="ENG"><s0>Heterostructures</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Pyrrole polymère</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Pyrrole polymer</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Pirrol polímero</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Composé organique volatil</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Volatile organic compound</s0>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Compuesto orgánico volátil</s0>
<s5>18</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Effet redresseur</s0>
<s5>29</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Rectifier effect</s0>
<s5>29</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Efecto rectificador</s0>
<s5>29</s5>
</fC03>
<fC03 i1="20" i2="X" l="FRE"><s0>Extinction luminescence</s0>
<s5>30</s5>
</fC03>
<fC03 i1="20" i2="X" l="ENG"><s0>Luminescence quenching</s0>
<s5>30</s5>
</fC03>
<fC03 i1="20" i2="X" l="SPA"><s0>Extinción luminiscencia</s0>
<s5>30</s5>
</fC03>
<fC03 i1="21" i2="X" l="FRE"><s0>Exciton</s0>
<s5>31</s5>
</fC03>
<fC03 i1="21" i2="X" l="ENG"><s0>Exciton</s0>
<s5>31</s5>
</fC03>
<fC03 i1="21" i2="X" l="SPA"><s0>Excitón</s0>
<s5>31</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>Charge effective</s0>
<s5>32</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG"><s0>Effective charge</s0>
<s5>32</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA"><s0>Carga efectiva</s0>
<s5>32</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>Séparation charge</s0>
<s5>33</s5>
</fC03>
<fC03 i1="23" i2="X" l="ENG"><s0>Charge separation</s0>
<s5>33</s5>
</fC03>
<fC03 i1="23" i2="X" l="SPA"><s0>Separación carga</s0>
<s5>33</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>Photoluminescence</s0>
<s5>34</s5>
</fC03>
<fC03 i1="24" i2="X" l="ENG"><s0>Photoluminescence</s0>
<s5>34</s5>
</fC03>
<fC03 i1="24" i2="X" l="SPA"><s0>Fotoluminiscencia</s0>
<s5>34</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE"><s0>ZnO</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="26" i2="X" l="FRE"><s0>Substrat ZnO</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="27" i2="X" l="FRE"><s0>Substrat indium</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="28" i2="X" l="FRE"><s0>Substrat oxyde d'indium et de zinc</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="29" i2="X" l="FRE"><s0>8560G</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="30" i2="X" l="FRE"><s0>8115P</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="31" i2="X" l="FRE"><s0>7855</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="32" i2="X" l="FRE"><s0>8560</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>210</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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	Serveur d'exploration sur l'Indium
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Serveur d'exploration sur l'Indium

ZnO/PPy Hybrid Heterojunction as an Ultraviolet Photosensor

ZnO/PPy Hybrid Heterojunction as an Ultraviolet Photosensor

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